http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114256411-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f0d6de8784ec85a966606b0856da0330 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 |
| filingDate | 2020-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fb8b15a584762ed22b80cc344c7afa2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd8cce6f43c7e439863dbe2a2d1f9c7e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7117c17bc549847bfde64e3d9115abab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb9c0ba59890507cc0635de227d47b23 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e1ffb95e20becbf5c20804521b5b832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39ff00b0c33a36ffcdc30d1c6d88c8f3 |
| publicationDate | 2022-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114256411-A |
| titleOfInvention | A process for controlling the bottom steepness of MRAM magnetic tunnel junction |
| abstract | The invention relates to a process for controlling the steepness of the bottom of the MRAM magnetic tunnel junction, which adopts the method of combining reactive ion etching and plasma beam etching. The reactive ion etching process is: the power of the top electrode is 100-500W, the power of the bottom electrode is 100-1500W, the pressure of the etching chamber is 2-20mT, the gas flow is 10-500sccm, and the etching is performed below the bottom insulating layer to Stop above the medium; the plasma beam etching process is: the ion beam angle is 45°-90°, the ion energy is 50-600V, the ion acceleration bias is 50-1000V, and the gas flow rate is 10-500sccm; the etching amount is 5 ‑15nm. The reactive gas is argon. The invention can adjust the steepness of the bottom of the MRAM structure, achieve the etching result that no metal is deposited on the sidewall of the MTJ layer, and can improve the TMR of the MRAM junction, thereby improving the performance of the MRAM device. |
| priorityDate | 2020-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.