| abstract |
The present disclosure provides a semiconductor element having a plurality of inclined isolation layers and a method for fabricating the same. The semiconductor device includes a base, two conductive pins, a first group of inclined isolation layers and a second group of inclined isolation layers; the two conductive pins are located on the base and extend along a vertical axis; the first group The inclined isolation layers are parallel to each other and located between the two conductive studs; the second group of inclined isolation layers are parallel to each other and located between the two conductive studs. The first group of inclined isolation layers extends along a first direction, the first direction is inclined with respect to the vertical axis; the second group of inclined isolation layers extends along a second direction, the second direction is inclined with respect to the vertical axis; and the first direction intersects the second direction. |