| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb272959740a2231f287ac6bf4d190a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-332 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32724
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 |
| filingDate |
2020-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2d3b27ecb0292cc12721d1c195654f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2982129ce5a3ba94cc62f226a08d378a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dd3dfd0df989c28f0c405ec738dfede
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e308aed26e50de41bd07e0fc06d3b787 |
| publicationDate |
2022-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-114072540-A |
| titleOfInvention |
Manufacturing method of semiconductor device, substrate processing apparatus and program |
| abstract |
The present invention includes a film-forming step of forming a film containing a predetermined element and nitrogen on a substrate by performing a predetermined number of cycles including the following (a) to (c): (a) heating in the processing chamber until the first A step of forming a first layer by supplying a raw material gas containing a predetermined element and a halogen to a substrate at a temperature; (b) supplying a plasma-excited first reforming gas containing hydrogen and no nitrogen to the substrate in the processing chamber, so that The step of reforming the first layer to form the second layer; and (c) supplying a plasma-excited second reforming gas containing nitrogen and hydrogen to the substrate in the processing chamber to reform the second layer to form the third layer The step of layering, wherein the supply time TH of the first reforming gas in (b) is set to be longer than the supply time TN of the second reforming gas in (c). |
| priorityDate |
2019-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |