| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11 |
| filingDate |
2021-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a388fd1f575462e037963fb0ca6a6e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13c5c698164d970caee9f6d2dd5e530b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_811a27481b9eec19c2444998051d391c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46dc6e2188ab388a4401e9d89bdb0c7e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b54cc464a153214585b0ef5c9071418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7ce543131ec3d479a3abfd19d518e73 |
| publicationDate |
2022-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-113948451-A |
| titleOfInvention |
Method of forming semiconductor device |
| abstract |
In a method of forming a semiconductor device, a metal adhesion layer can be formed on the bottom and sidewalls of the trench before forming the metal plug in the trench. Plasma can be used to alter the phase composition of the metal adhesion layer to increase the adhesion between the metal adhesion layer and the metal plug. In particular, the plasma can cause a shift or transformation of the phase composition of the metal adhesion layer such that the metal adhesion layer becomes composed of the main phase (111). The main phase (111) of the metal adhesion layer increases the adhesion of the metal adhesion layer. |
| priorityDate |
2020-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |