http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113917304-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5c5665e9e92973f40906fd6b5eee80e6 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2603 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2021-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_271748767ae082b9a6117b11ae1a86ad http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aa8da1ada0d878bb6bec11f5b8e40e4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3605ec49f83572b50e978dc7cb6221a0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f8daddb920df413e20bc0aa6436f6c6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c477cf02c115159392c9972f5013bc4b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b281e48caa0bd5688a86b33e05f1b63 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5daa818eb7e33eae12fa0cf8665c748d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d552a3114df4d95c86dbfc944953d3a3 |
| publicationDate | 2022-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113917304-A |
| titleOfInvention | Method for rapidly identifying parasitic capacitance exceeding preset value of radiated silicon carbide vertical double-diffusion transistor |
| abstract | The invention relates to a method for rapidly identifying the parasitic capacitance exceeding the preset value of a radiated silicon carbide vertical double-diffusion transistor, which comprises a static test platform, a sample test board, a capacitance-voltage unit module, a source measurement unit module and a computer, wherein scanning software in the computer is used for scanning the set frequency and voltage to obtain the accurate structural capacitance data of the silicon carbide vertical double-diffusion transistor, the structural capacitance data is optimized and fitted into a structural capacitance curve, the peak of the obtained structural capacitance curve is automatically removed to obtain a smoother curve, the structural capacitance curve is fitted into a transistor parasitic capacitance curve through a fixed algorithm operation, the parasitic capacitance curves of the silicon carbide vertical double-diffusion transistor obtained by the tests before and after irradiation are compared to automatically generate a difference value generated in a Miller platform region, and then, a reasonable range of the preset value is set, and if the preset value is exceeded, whether the switching performance of the device is seriously influenced or not can be quickly judged according to data accumulated in experiments. The invention has convenient and quick operation and certain universality. |
| priorityDate | 2021-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419549006 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9863 |
Total number of triples: 21.