abstract |
The present application relates to an epoxy resin composition for encapsulating a semiconductor device and a semiconductor device encapsulated using the epoxy resin composition. The epoxy resin composition includes: an epoxy resin; a curing agent; and an inorganic filler, wherein the inorganic filler includes at least one selected from the group consisting of gadolinium oxide, samarium oxide, boron nitride, and boron carbide. The epoxy resin composition has good properties in flow, shrinkage, and neutron shielding without lowering Tg. |