| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fec576c38e34882531ca37d6b922bf42 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2020-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07cbdf5f3f756988709a8e97a99e4c30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9d7655461664b1755dd656d9ee7327b |
| publicationDate |
2021-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-113614891-A |
| titleOfInvention |
Dry etching method and method for manufacturing semiconductor device |
| abstract |
The dry etching method of the present invention is characterized in that: a substrate having a silicon compound film is etched by plasmatizing a dry etchant containing all of the following 1 st to 4 th gases with a mask having a predetermined opening pattern formed on the silicon compound film interposed therebetween. 1, gas: 1 or more compounds selected from the group consisting of iodofluorocarbon compounds and bromofluorocarbon compounds; and 2, gas: from C n F m Unsaturated fluorocarbons of the formula; gas No. 3: from C x H y F z Hydrogen-containing unsaturated fluorocarbon represented by; gas No. 4: an oxidizing gas. |
| priorityDate |
2019-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |