http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113308249-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ec83ea8e6721b1a5654b038fdb9b223f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1d29f7ac2c7f9be9f7dae1a83bbb5c92 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6708 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67086 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68764 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00 |
| filingDate | 2021-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3593ec535613e6d4985f67969d7bcc16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f59bcfe64f77bd73c1880e344fa187a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90a23c8c2a2ceb656eae0be243654185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d30b459da7d101ce676e6d46f65b587 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06d644619730458eb402fa88f1eab97a |
| publicationDate | 2021-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113308249-A |
| titleOfInvention | Silicon etching solution, manufacturing method of silicon device using the etching solution, and substrate processing method |
| abstract | The present invention relates to a silicon etching solution, a method for manufacturing a silicon device using the etching solution, and a method for treating a substrate. Provided is a silicon etching solution capable of suppressing the influence of the crystal orientation of silicon and capable of performing the same etching treatment regardless of the crystal orientation of a single crystal grain in a polycrystalline silicon film. An isotropic silicon etching solution comprising quaternary ammonium hydroxide, water, and at least one compound selected from the group consisting of compounds represented by the following formulas (1) and (2), and The following conditions 1 and 2 are satisfied. R 1 O-(C m H 2m O) n -R 2 (1)HO-(C 2 H 4 O) p -H (2) Condition 1: 0.2≤etching rate ratio (R 110 /R 100 )≤1 Condition 2: 0.8≦etching rate ratio (R 110 /R 111 )≦4 (in the above conditions, R 100 represents the etching rate with respect to the 100 face of single crystal silicon, and R 110 represents the etching rate with respect to the 110 face of single crystal silicon rate, R 111 represents the etching rate with respect to the 111 face of single crystal silicon). |
| priorityDate | 2020-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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