| abstract |
The present invention provides a substrate processing method and a substrate processing apparatus capable of suppressing the occurrence of arc discharge during etching. The present invention is a substrate processing method in a chamber, wherein the chamber includes: a stage on which a substrate is placed; an upper electrode opposite to the stage; and a gas supply port for supplying a process gas to the chamber, The substrate processing method includes the following a) to d). a) is a step of supplying the substrate to the stage. b) is a step of supplying the first process gas into the chamber. c) is a step of generating plasma from the first process gas by continuously supplying an RF signal while continuously supplying a negative DC voltage to the upper electrode. d) is a step of generating plasma from the first process gas by supplying a pulsed RF signal while continuously supplying a negative DC voltage to the upper electrode. c) and d) are performed alternately and repeatedly. In addition, the period per one time of c) is 30 seconds or less. |