| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 |
| filingDate |
2021-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac490df0daaba85b4db1422b101549fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3629c5ba9b340c40c82775a4ca2e4cb3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f783889d3e53d7b58255f0eaddf15075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21fde87d809fa755dbff82bb8941c9fb |
| publicationDate |
2021-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-113257670-A |
| titleOfInvention |
Etching method and plasma processing apparatus |
| abstract |
The present invention provides an etching method and a plasma processing apparatus capable of maintaining favorable in-plane uniformity of etching. The etching method includes: a first etching step of etching a first silicon-containing film of a substrate with plasma of a first processing gas; and a second etching step of etching a second silicon-containing film of the substrate with plasma of a second processing gas . The etching method repeats the first etching step to the second etching step a predetermined number of times. |
| priorityDate |
2020-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |