Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
filingDate |
2019-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0debd8eb331630a238e69f324ec12f88 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e36c0bb049be2b5f3146ba9beb908a8c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec3357243241c80310f2da6e6e278514 |
publicationDate |
2021-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-113196462-A |
titleOfInvention |
Oxidation-reduction of SiOC films |
abstract |
Embodiments described herein generally relate to methods of forming a flowable low-k dielectric layer over a trench formed on a surface of a patterned substrate. The method comprises the following steps: delivering a silicon-and-carbon-containing precursor into a substrate processing region of a substrate processing chamber for a first period of time and a second period of time; flowing an oxygen-containing precursor into a remote plasma region of a plasma source while igniting the remote plasma to form a radical oxygen precursor; flowing the radical oxygen precursor into the substrate processing region at a second flow rate after the first time period has elapsed and during the second time period; and exposing the silicon-and-carbon-containing dielectric precursor to electromagnetic radiation for a third period of time after the second period of time has elapsed. |
priorityDate |
2018-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |