| abstract |
Methods are provided for depositing hardmask materials and films, and more particularly, methods for depositing phosphorus-doped silicon nitride films. A method of depositing a material on a substrate in a processing chamber, comprising: exposing the substrate to a deposition gas in the presence of RF power to deposit a phosphorous dopant on the substrate during a plasma enhanced chemical vapor deposition (PE-CVD) process of silicon nitride film. The deposition gas contains one or more silicon precursors, one or more nitrogen precursors, one or more phosphorus precursors, and one or more carrier gases. The phosphorus concentration of the phosphorus-doped silicon nitride film is in the range of about 0.1 atomic percent (atomic %) to about 10 atomic %. |