http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113130774-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1b02fb4923b61a06d4b0c40ec8dd01d2 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-17 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
| filingDate | 2019-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75db8f36e4be333d4f65c276bc844ae1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ded057fa9c358c26009cff4ae4342cbb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ba12693d9ead670ffd99d550ca46a32 |
| publicationDate | 2021-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113130774-A |
| titleOfInvention | Quantum dot light-emitting diode, preparation method thereof, and display device |
| abstract | The invention discloses a quantum dot light-emitting diode, a preparation method thereof, and a display device, wherein the quantum dot light-emitting diode comprises a cathode, an anode and a quantum dot light-emitting layer disposed between the cathode and the anode, the anode A hole function layer is arranged between the quantum dot light-emitting layer and the hole function layer, and the hole function layer includes a stacked hole injection layer and a hole transport layer, the hole injection layer is arranged close to the anode, and the hole transport layer It is arranged close to the quantum dot light-emitting layer, and the hole injection layer includes a first transition metal oxide thin film, a transition metal sulfide thin film and a second transition metal oxide thin film that are stacked and arranged, and the first transition metal oxide thin film is close to the The anode is arranged, and the second transition metal oxide thin film is arranged close to the hole transport layer. The hole injection layer provided by the invention can greatly enhance the hole injection capability, improve the recombination probability of electrons and holes, and improve the luminous efficiency of the QLED device. |
| priorityDate | 2019-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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