| abstract |
The invention discloses a quantum dot light-emitting diode, a preparation method thereof, a light-emitting module, and a display device. The quantum dot light-emitting diode sequentially includes an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a cathode; Wherein, the hole injection layer is a doped copper sulfide film. In the present invention, the hole injection layer is prepared by doping the copper sulfide thin film, because the used doped copper sulfide is not only cheap, but also non-toxic and stable. In addition, by using doped copper sulfide instead of the traditional PEDOT:PSS as the hole injection layer, the surface work function of ITO, the energy band structure of CuS and the carrier transport performance can be well adjusted, and the hole injection efficiency and Light transmission, thereby improving the luminous efficiency, stability and service life of QLED devices. |