abstract |
Methods and apparatus are provided for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate. The method involves forming a bilayer comprising a barrier layer deposited directly on a chalcogenide material using pulsed plasma-enhanced chemical vapor deposition (PP-PECVD) and a barrier layer using plasma enhanced atomic layer deposition (PEALD) on the barrier layer Encapsulation layer deposited above. In various embodiments, the barrier layer is formed using a halogen-free silicon precursor, and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant. |