| abstract |
One method for forming a silicon nitride film, which may be carbon doped, by a plasma ALD process includes introducing a substrate into a reactor that is heated up to about 600°C. At least one silicon precursor as defined herein and having one or two Si-C-Si bonds is introduced to form a chemisorbed film on the substrate. The reactor is then purged with a suitable inert gas for any unconsumed precursors and/or reaction by-products. A nitrogen-containing plasma is introduced into the reactor to react with the chemisorbed film to form a silicon nitride film, which may be carbon doped. The reactor is again purged of any reaction by-products with a suitable inert gas. These steps are repeated as necessary to achieve a predetermined thickness of the silicon nitride film that can be deposited for doped carbon. |