http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112805629-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-422 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
| filingDate | 2020-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112805629-B |
| titleOfInvention | Resist stripping solution |
| abstract | Provided is a resist stripping solution that suppresses side etching of copper and molybdenum when peeling a hard-baked resist on a copper/molybdenum laminate film. A resist stripping solution comprising: 0.5 to 5 mass % of secondary cyclic amine relative to the total amount of the stripping solution, and 5 to 10 mass % of basicity relative to the second-stage cyclic amine Amino acid, 10-30 mass % of protective agent with respect to the said basic amino acid, 10-50 mass % of sugar alcohol with respect to the said secondary cyclic amine, organic polar solvent, and water. |
| priorityDate | 2019-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.