http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112713086-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8fbf590463d3518a746d90a6a2c1c34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e829b93e1bdf87272f2aaf3baaaa0f4 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2019-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f0f0a80ceacc87bb1b1ec15711d4dea |
| publicationDate | 2021-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112713086-A |
| titleOfInvention | Semiconductor structure and forming method thereof |
| abstract | A semiconductor structure and a forming method thereof are provided, wherein the forming method comprises the following steps: providing a layer to be etched; forming a precursor layer on the layer to be etched; annealing the precursor layer to form a plurality of mutually separated initial first mask layers and second mask layers on the precursor layer, wherein the second mask layers are positioned between the adjacent initial first mask layers; modifying the initial first mask layer to form a first mask layer; and etching to remove the second mask layer, wherein the etching rate of the process for etching to remove the second mask layer on the material of the first mask layer is less than the etching rate of the material of the initial first mask layer. The performance of the formed semiconductor structure is improved. |
| priorityDate | 2019-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.