| abstract |
In an embodiment, the structure includes: a processor device including a logic device and no memory; a first memory device directly face-to-face bonded to the processor device by metal-to-metal and dielectric-to-dielectric bonds; laterally a first dielectric layer surrounding the first memory device; a redistribution structure over the first dielectric layer and the first memory device, the redistribution structure including a metallization pattern; and a first dielectric layer extending through the first dielectric layer A conductive via, the first conductive via connects the metallization pattern of the redistribution structure to the processor device. Embodiments of the invention also relate to integrated circuit structures and methods of forming the same. |