| abstract |
The boron nitride film, boron carbide film, or boron carbonitride film may be deposited using remote plasma chemical vapor deposition (CVD) techniques. A boron-containing precursor is provided to the reaction chamber, wherein the boron-containing precursor has at least one boron atom bonded to a hydrogen atom. Radical species, such as hydrogen radical species, are provided from a remote plasma source in a substantially low energy or ground state and enter the reaction chamber. The hydrocarbon precursor can flow with the boron-containing precursor, and the nitrogen-containing plasma species can be introduced into the reaction chamber from the remote plasma source along with the radical species. The boron-containing precursor can interact with the radical species along with one or both of the hydrocarbon precursor and the nitrogen-containing precursor to deposit a boron nitride film, a boron carbide film, or a boron carbonitride film. |