Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10677 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67034 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
filingDate |
2019-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de62f8d9ac05a88e9421baf65a88ab1d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c89b01281ac87b5b3e0ef3f96f4e4181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6234bd67d56dd472bf96f86b44aa017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96ce915e37ee06bc793a50197ea5e091 |
publicationDate |
2021-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-112640041-A |
titleOfInvention |
Method for removing SnO2 film from chamber |
abstract |
A method of removing SnO2 residues from a processing chamber is provided as an embodiment. The method embodiments include introducing hydrocarbon gas and hydrogen gas into the plasma processing system at a ratio of 1% to 60%. The plasma generated by the plasma source is utilized to etch the SnO2 residue from the surface of the processing chamber. The SnH 4 gas reacts with the hydrocarbon gas to generate volatile organotin compounds. The method also provides for evacuating the organotin compound from the processing chamber. Introducing the hydrocarbon gas together with the hydrogen gas at a ratio of 1% to 60% reduces the rate at which the SnH 4 gas is decomposed into Sn powder. |
priorityDate |
2018-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |