| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3321 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2020-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f07d38277837556d07b38971cd52e4bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9386220136e100d276c534a0b0c3ced5 |
| publicationDate |
2021-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-112599407-A |
| titleOfInvention |
Substrate processing method and plasma processing apparatus |
| abstract |
The present invention provides a substrate processing method and a plasma processing apparatus for forming an organic film at the atomic layer level. In the illustrated embodiment, a substrate processing method is provided. The substrate processing method includes: a) a step of supplying the substrate into a chamber; and b) a step of forming an organic film on the surface of the substrate. b) consists of two steps b1) and b2). b1) A first gas containing an organic compound is supplied into the chamber to form a precursor layer on the substrate. b2) Supplying a second gas containing a reforming gas into the chamber, and supplying energy to at least one of the precursor layer and the second gas to reform the precursor layer, thereby forming an organic film on the substrate. |
| priorityDate |
2019-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |