http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112397506-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33f2203f2e89a0bf4ba338eaf46a4ccb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate | 2019-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e98c056282110d71d4fe5d9acb4b1a4d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16d87eff55336a088cc158b1828ef699 |
| publicationDate | 2021-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112397506-A |
| titleOfInvention | Trench gate power device and manufacturing method thereof |
| abstract | The invention discloses a trench gate power device.A charge balance trench is formed in a drift region between trench gates, and the depth of the charge balance trench is greater than that of a gate trench of the trench gates; forming a charge balance region at the bottom of the charge balance groove, wherein the charge balance region and the adjacent drift region are mutually depleted; forming an active region in a self-aligned manner in a surface region of the channel region outside the charge balance trench; and a source contact hole penetrating through the interlayer film is formed at the top of the source region, the opening transverse dimension of the source contact hole is larger than the transverse dimension of the charge balance groove, a source lead-out structure made of a conductive material is formed in the charge balance groove at the opening and the bottom of the source contact hole, the bottom of the source lead-out structure forms ohmic contact with the charge balance region, the channel region and the source region, and the top of the source lead-out structure is connected with a source electrode made of a front metal layer. The invention also discloses a manufacturing method of the trench gate power device. The invention can improve the breakdown voltage of the device with lower cost and simultaneously reduce the on-resistance of the device. |
| priorityDate | 2019-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.