http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112397382-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a3d897cd97da84ea9db29a8f4812fc47 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2020-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9547995c909f7d2546a76b8fbf2f1aaf |
| publicationDate | 2021-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112397382-A |
| titleOfInvention | A kind of processing method of polysilicon film |
| abstract | The invention relates to a method for processing a polysilicon film and a method for manufacturing a thin film transistor. The method for processing a polysilicon film comprises: depositing an inorganic film layer on the surface of the polysilicon film, and using etching particles to keep the inorganic film layer away from the polysilicon Etching the surface of one side of the film can reduce the surface roughness of the polysilicon film and avoid damage to the polysilicon film caused by etching particles, thereby reducing the leakage current of the thin film transistor using the polysilicon film as the active layer, thereby making the When the thin film transistor is applied to a display device, the display effect of the display device can be effectively improved. |
| priorityDate | 2020-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.