| abstract |
The invention belongs to the field of release films, and discloses a preparation method of an ETFE release film for an IC chip, which comprises the following steps: (1) the ETFE resin, the cross-linking agent, the antioxidant and the toughening agent in the mass ratio of 100:4:3:5 are uniformly mixed and added into the inner layer of the three-layer co-extrusion extruder, and the ETFE resin, the cross-linking agent, the antioxidant and the adhesive in the mass ratio of 100:4:3:5 are uniformly mixed and added into the middle layer of the three-layer co-extrusion extruder. The ETFE release film is prepared by using ETFE resin as a main raw material and adopting a processing mode of multilayer melt co-extrusion and compounding, so that the comprehensive performance of the ETFE resin film is ensured to the maximum extent, the ETFE release film has the functions of high temperature resistance, wear resistance, static electricity resistance and the like, can be pressed at 250 ℃, has high release property, and avoids the possibility of the reduction of the overall performance of the ETFE resin film due to different material properties of a functional additive in the same film compared with the single extrusion film forming mode. |