| abstract |
The invention provides a method for preparing a supported gallium nitride catalyst with a large specific surface area, which is characterized in that the method uses a gallium-containing organic compound and a nitrogen-containing gas as raw materials, a carrier with a large specific surface area as a carrier, and adopts an atomic layer deposition method. , the temperature of the carrier is controlled to be between 250°C and 550°C, and the supported gallium nitride catalyst with large specific surface area is prepared by the reaction. Compared with the prior art, the method of the invention can continuously feed the precursor for a long time, realize the uniform deposition of small-scale gallium nitride particles on the powder carrier with a large specific surface area, and the loading amount of gallium nitride is precisely controllable. The catalyst obtained by the method of the invention has a stable three-dimensional structure, which enriches the catalyst structure and improves the anti-carbon deposition and anti-poisoning capabilities of the catalyst. The obtained catalyst has a certain pore structure, which can effectively reduce particle sintering in the high-temperature catalysis process. |