| abstract |
Methods, systems and apparatus are provided for generating hydrogen radicals for processing workpieces, such as semiconductor workpieces. In one example implementation, a method may include generating one or more nuclides from an inert gas in a plasma chamber by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more nuclides; , to generate one or more hydrogen radicals; and exposing the workpiece in the processing chamber to the one or more hydrogen radicals. |