| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_799858790a0d932d2bf525d1f2324ad6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32724
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2020-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9fbbc052b905dfd7664de56d101cba1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea1457d6e37bbb24057ebd7c0a26dffc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79e4109c17fa2c02ffca045d03af5d90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1821bcffd0db241201f3380218427d3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00b10858c3f8eeb9a96155ca1f5165f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_793782a1528718e0d7519760f5decec8 |
| publicationDate |
2021-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-112201557-A |
| titleOfInvention |
Substrate processing apparatus and method |
| abstract |
The present invention provides an apparatus and method for treating a substrate using plasma with improved plasma stability and process repeatability. The substrate processing method includes: providing a substrate processing apparatus including a plasma generation area and a processing area separated from the plasma generation area; arranging a substrate including a silicon layer and an oxide layer in the processing area; In the case of the plasma generation region, a hydrogen-based gas is supplied to the treatment region, thereby forming a hydrogen atmosphere in the treatment region; plasma is generated by supplying a fluorine-based gas to the plasma generation region; and the generated plasma is supplied to the treatment region , to selectively remove the silicon layer relative to the oxide layer. |
| priorityDate |
2019-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |