http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112133630-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2015-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec0c7639355d2fe1a5a21a9b76c97373 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f07d38277837556d07b38971cd52e4bf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ebdfbf7429253fcf1ed46261652387c |
| publicationDate | 2020-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112133630-A |
| titleOfInvention | Method for processing object to be processed having mask |
| abstract | The present invention relates to a method of processing an object to be processed having a mask. [ problem ] to form a silicon oxide film at a low temperature without using a dedicated film forming apparatus in order to adjust the opening width of a mask. [ solution ] in one embodiment, a method for forming a silicon oxide film by repeating a sequence including the steps of: (a) a first step: generating a plasma of a first gas including a silicon halide gas in a processing container of a plasma processing apparatus accommodating an object to be processed, to form a reaction precursor; (b) a second step: purging a space within the process vessel; (c) a third step: generating plasma of a second gas containing oxygen in the processing container to form a silicon oxide film; and (d) a fourth step: purging the space within the process vessel. |
| priorityDate | 2014-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.