| abstract |
In an etching method of an exemplary embodiment, a plasma of a process gas containing a fluorocarbon gas is generated in a chamber of a plasma processing apparatus, and a step of forming a deposit containing a fluorocarbon gas on a substrate. The substrate has a first region formed of a silicon-containing material and a second region formed of a metal-containing material. Next, plasma of the rare gas is generated in the chamber, and the rare gas ions are supplied to the substrate. As a result, the first region is etched with the fluorocarbon in the deposit. When the plasma of the rare gas is generated, an electromagnet is used to form a distribution of a magnetic field having a larger horizontal component above the edge side of the substrate than above the center of the substrate. |