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filingDate 2018-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_178905978eedecc70a6628f26bd11540
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publicationDate 2020-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-111771263-A
titleOfInvention Cleaning method, manufacturing method of semiconductor device, substrate processing apparatus, and program
abstract After the process of forming a film on the substrate is performed in the processing container, a cleaning gas is supplied into the processing container to remove the deposits adhering to the processing container; in the process of removing the deposits, the steps are sequentially repeated. : a first step of supplying the cleaning gas into the processing container while maintaining a predetermined first pressure by evacuation by a vacuum pump, stopping the supply of the cleaning gas and adjusting the cleaning gas in the processing container and the cleaning gas A second step of evacuating the resulting reaction product, and a third step of cooling an exhaust pipe connecting the processing vessel and the vacuum pump while maintaining the inside of the processing vessel at a second pressure lower than the first pressure Step: In the third step, when the temperature of the exhaust pipe becomes equal to or lower than the second temperature, the cooling is not continued until the temperature becomes equal to or lower than the first temperature, and the cooling is completed for a predetermined time.
priorityDate 2018-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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