http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111668190-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2601 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2642 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 |
| filingDate | 2019-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111668190-B |
| titleOfInvention | Characterization method of hot electron effect based on compound material MISFET device |
| abstract | The invention relates to a test structure based on thermionic effect of MISFET devices, comprising: a substrate (1), a P-type epitaxial layer (2), an insulating layer (3), a passivation layer (4), a gate (5), First N+ doped region (6), source (7), drain (8), P+ doped region (9), second N+ doped region (10), electrode A (11) and electrode B (12) ). This embodiment provides a test structure of a heterojunction device and a method for characterizing thermionic effect of a technology with controllable hot electron injection quantity and energy. The injection quantity of hot electrons in the insulating layer is controlled by adjusting the voltages Va and Vb. The voltage Va is used to control the injection energy of hot electrons in the insulating layer, which solves the problems of uncontrollable number and injection energy of hot electrons injected into the device, as well as non-uniform injection into the insulating layer, etc. In-depth analysis. |
| priorityDate | 2019-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.