| abstract |
Described herein are methods and apparatus for roughness reduction using an integrated atomic layer deposition (ALD) and etch process. In some embodiments, after providing the mask on the substrate, the method includes depositing, by ALD, a conformal layer on the mask to reduce roughness, and etching the layer under the mask to form patterned features with reduced roughness. In some embodiments, after etching the substrate to a first depth to form features in the substrate at the first depth, the method includes depositing, by ALD, a conformal layer on sidewalls of the features to protect the sidewalls and subsequently reduce roughness during the etching process. ALD and etching processes can be performed in a plasma chamber. |