| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-50 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 |
| filingDate |
2018-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ad848fccdefef1a0ec4e1c1fcc15550
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0d751b427900613caac95d9f55b7662
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_451488d8781191daea8cba6e6df7cc49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83ccb0e9eff7ae5cf423a2e64ad043c5 |
| publicationDate |
2020-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-111418046-A |
| titleOfInvention |
Silicon Oxide Silicon Nitride Stacked Stair Step Etching |
| abstract |
A method for forming a stair tread structure in a stack on a substrate is provided. The method includes at least one cycle of stair stepping. Each stair tread cycle includes trimming the mask and etching the stack. Etching the stack is provided in multiple cycles, wherein each cycle includes: etching the SiO2 layer and etching the SiN layer. Etching the SiO 2 layer includes: flowing a SiO 2 etching gas into the plasma processing chamber, wherein the SiO 2 etching gas includes at least one of SF 6 and NF 3 , a hydrofluorocarbon, and an inert bombardment gas; The SiO2 etching gas generates a plasma; provides a bias and stops the SiO2 layer etching. The etching the SiN layer includes: flowing a SiN etching gas into the plasma processing chamber, the SiN etching gas containing hydrofluorocarbons and oxygen; generating a plasma from the SiN etching gas; providing a bias; and stopping the SiN layer etching. |
| priorityDate |
2017-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |