| abstract |
A plasma processing method includes: providing a plasma processing device, including a processing chamber and an electrostatic chuck accommodated in the processing chamber, the electrostatic chuck comprising a support surface, the electrostatic chuck A lift pin is arranged in the tray, and the lift pin can be raised from a first position to a second position; when the lift pin is in the first position, a substrate to be processed is placed on the support surface; A first plasma is generated in the processing chamber, the first plasma is formed by a first processing gas, and the first processing gas includes a first mixed gas composed of hydrogen and nitrogen; the lift pins are controlled by The first position is raised to the second position, so that the substrate to be processed is disposed at a distance from the support surface; a second plasma is generated in the processing chamber, and the second plasma is generated by a first A second process gas is formed, and the second process gas includes a second mixed gas consisting of hydrogen and nitrogen. |