http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111286719-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate | 2015-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_706b51800430f8c2acde47d9af9c48f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bbf4c5227a93b7122e3a2eb8a8e54b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2afb71c3e2033be43724913a6f71f2c3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c60fff14ef82dcc2e61b15e594b76db8 |
| publicationDate | 2020-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111286719-A |
| titleOfInvention | Tuning Remote Plasma Sources for Improved Performance with Repeatable Etch and Deposition Rates |
| abstract | Embodiments of the present disclosure generally relate to methods for conditioning interior wall surfaces of remote plasma generators. In one embodiment, a method for processing a substrate is provided. The method includes the steps of exposing an inner wall surface of a remote plasma source to a conditioning gas in an excited state to passivate the inner wall surface of a remote plasma source, wherein the remote plasma source is coupled to a processing chamber through a conduit a chamber in which the substrate is disposed in a processing chamber and the conditioning gas comprises an oxygen-containing gas, a nitrogen-containing gas, or a combination of the foregoing. The method has been observed to enhance dissociation/recombination rates and plasma coupling efficiency in processing chambers, and thus provide repeatable and stable plasma source performance from wafer to wafer. |
| priorityDate | 2014-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.