http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111129320-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1b02fb4923b61a06d4b0c40ec8dd01d2 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-865 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
| filingDate | 2018-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38372395a9a1b97b24f2ccf4ba3e7023 |
| publicationDate | 2020-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111129320-A |
| titleOfInvention | A quantum dot light-emitting diode |
| abstract | The invention discloses a quantum dot light-emitting diode, which comprises: an anode, a cathode, a quantum dot layer arranged between the anode and the cathode, and an electron transport arranged between the cathode and the quantum dot layer layer, the material of the electron transport layer is metal oxide nanoparticles, which further comprises a first layer disposed between the cathode and the electron transport layer, the number of oxygen vacancies in the first layer is less than that of the electrons The number of oxygen vacancies in the transport layer. In the present invention, a first layer is arranged between the cathode and the electron transport layer, and the number of oxygen vacancies in the first layer is less than the number of oxygen vacancies in the electron transport layer, so that the cathode electrons are trapped by the oxygen vacancies in the first layer. The reduction reduces the number of electrons trapped by oxygen vacancies in the electron transport layer, and avoids quenching caused by the recombination of a large number of electrons trapped by oxygen vacancies in the electron transport layer with the valence band holes in the quantum dot layer, thereby improving the performance of quantum dot light-emitting diodes. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022143832-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113809271-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113809271-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021253785-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023160002-A1 |
| priorityDate | 2018-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.