| abstract |
The present application discloses a method for depositing an oxide film by PEALD using nitrogen gas, and specifically discloses a method for depositing an oxide film on a template for patterning in semiconductor manufacturing, comprising the following steps: (i) in a reaction providing a template with a patterned structure thereon in space; and (ii) depositing an oxide film on the template by plasma enhanced atomic layer deposition (PEALD) using nitrogen as a carrier gas and also as a dilution gas, thereby The template and the exposed top surface of the patterned structure are completely covered with the oxide film. |