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filingDate 2018-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a882a27a168c10d36ad3550e3d07489
publicationDate 2020-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-110959312-A
titleOfInvention Plasma generating apparatus, substrate processing apparatus, and manufacturing method of semiconductor device
abstract The present invention provides a technique including: a high-frequency power supply for supplying power to a plasma generating unit; a matching device provided between the high-frequency power supply and the plasma generating unit for obtaining the plasma generating unit The load resistance of the part is matched with the output resistance of the high-frequency power supply. The high-frequency power supply includes: a high-frequency oscillator, which oscillates to generate a high frequency; extracting a part of the traveling wave component from the above-mentioned high-frequency oscillator and the reflected wave component from the above-mentioned matching device; a filter for removing noise signals added to the above-mentioned reflected wave component extracted by the above-mentioned directional coupler; a power monitor , which measures the reflected wave component after passing through the filter and the traveling wave component extracted by the directional coupler, and performs feedback control on the matching device to reduce the reflected wave component from the matching device.
priorityDate 2017-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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