| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-09181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-03452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68363
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05638
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05686
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80905
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-8001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-83896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-83895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-056 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02598
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-83
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-187 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11563
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1157 |
| filingDate |
2019-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-110914991-B |
| titleOfInvention |
Three-dimensional memory device with transferred interconnect layer and method of forming the same |
| abstract |
Three-dimensional (3D) memory devices and methods for forming 3D memory devices are disclosed. A memory stack including interleaved sacrificial layers and dielectric layers is formed over the first substrate. A channel structure is formed extending vertically through the memory stack. A single crystal silicon layer is formed in the second substrate. An interconnect layer including bit lines is formed on the single crystal silicon layer over the second substrate. The single crystal silicon layer and the interconnect layer formed thereon are transferred from the second substrate to the memory stack over the first substrate such that the interconnect layer in the The bit line is electrically connected to the channel structure. |
| priorityDate |
2018-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |