http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110687425-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7e55146a08d9d884eaa17b76617256da |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2642 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2019-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1ec6dca7dea92e1dc63fc7744de5ce0 |
| publicationDate | 2020-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110687425-A |
| titleOfInvention | Power semiconductor module, method for detecting service life of power semiconductor module, and inverter device |
| abstract | The invention provides a power semiconductor module, a service life detection method thereof and an inverter device, comprising: a power semiconductor device; a saturation voltage drop detection unit electrically connected with the power semiconductor device for detecting the saturation voltage drop V of the power semiconductor device CESAT (ii) a And a service life prompting unit connected with the saturated voltage drop detection unit and capable of prompting the service life according to the saturated voltage drop V CESAT Sending a prompt message which indicates the service life of the power semiconductor device, wherein the main reason influencing the service life of the power semiconductor device is the connection degradation of a material combination part of the power semiconductor device, the degradation (loosening or peeling) of the connection of the binding line and the chip, the soldering layer of the chip and the DBC insulating substrate and the soldering layer of the DBC insulating substrate and the copper bottom plate generally occurs at the combination part of the binding line and the chip, and the degradation (loosening or peeling) of the connection of the binding line and the chip and the DBC insulating substrate can cause the resistance of the connection part to be increased, thereby causing the saturation voltage CESAT By lowering the saturation pressure drop V CESAT To measure the service life of the power semiconductor device。 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112781174-A |
| priorityDate | 2019-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341 |
Total number of triples: 14.