Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2027-11866 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0676 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F30-392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
filingDate |
2018-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2019-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-110582849-A |
titleOfInvention |
Vertical full ring library architecture |
abstract |
A system and method for creating a layout of vertical full ring standard cells is described. A metal gate is arranged around two vertical nanowire sheets formed on a silicon substrate. A gate contact is formed on the metal gate between the two vertical nanowire sheets. A gate extension metal (GEM) is disposed over the metal gate at least on the gate contact. A gate via is formed on the GEM at a location where a local interconnect layer can be used to route a gate connection. Arranging local metal layers is used to connect local wiring and power connections. |
priorityDate |
2017-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |