http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110396717-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00 |
| filingDate | 2019-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110396717-B |
| titleOfInvention | High-quality high-purity semi-insulating silicon carbide single crystal, substrate and preparation method thereof |
| abstract | The application discloses a high-quality high-purity semi-insulating silicon carbide single crystal, a substrate and a preparation method thereof, belonging to the field of semiconductor materials. According to the preparation method of the high-purity semi-insulating silicon carbide single crystal, a silicon carbide raw material is placed in a crucible to be sublimated into a sublimation raw material, the sublimation raw material is transmitted to a primary seed crystal by utilizing an axial temperature gradient in the crucible in a gas phase mode to carry out primary crystal growth, and the high-purity semi-insulating silicon carbide single crystal is prepared; at least one transition seed crystal is arranged between the silicon carbide raw material and the first-stage seed crystal, and the transition seed crystal enables at least part of sublimed raw material to carry out a primary single crystal growing-re-subliming process. According to the preparation method, the semi-insulating silicon carbide single crystal with extremely high purity can be prepared by using the silicon carbide raw material with low purity, the growth quality of the semi-insulating silicon carbide single crystal with high purity can be improved, and the preparation cost is low; the high-purity semi-insulating silicon carbide single crystal and the substrate thereof prepared by the method have no or few defects, high purity, high quality and good uniformity. |
| priorityDate | 2019-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.