| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_41e7550911d3e588caa3fbc6a252ad80 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-46 |
| filingDate |
2019-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cdbed7753e0006b49c2461918de64e82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b38b7ff2b112c3a0827e1826bfd4b67e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5818f894387438e182516979550cae25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee33c35af64ecd019161e995e58c5bc4 |
| publicationDate |
2019-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-110311039-A |
| titleOfInvention |
A kind of Nb-tin dioxide nano-precursor, the method of using it as electron transport layer to prepare perovskite solar cell |
| abstract |
This application discloses a Nb-SnO 2 nano-precursor and a method for preparing a perovskite solar cell by using it as an electron transport layer. The preparation process of the solar cell is as follows: (1) depositing Nb-SnO 2 on a clean ITO electrode Electron transport layer; (2) Deposit C 60 ‑SAM interface passivation layer on Nb‑SnO 2 electron transport layer; (3) Deposit FA 0.8 Cs 0.2 Pb (I 0.7 Br 0.3 ) on C 60 ‑SAM interface passivation layer 3 Photosensitive layer; (4) Deposit Spiro‑OMeTAD hole transport layer on the photosensitive layer; (5) Evaporate Au counter electrode on Spiro‑OMeTAD hole transport layer. The average photoelectric conversion efficiency of the solar cells obtained by this method has reached 21.03% in the laboratory stage. After optimization, the device was continuously illuminated for 80 hours without encapsulation, and its photoelectric conversion efficiency remained above 75% of the initial efficiency. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111668377-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113926448-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111668378-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113926448-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111668378-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112209430-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112209430-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111029467-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111029467-A |
| priorityDate |
2019-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |