| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate |
2018-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-110277362-B |
| titleOfInvention |
Semiconductor structure and forming method thereof |
| abstract |
The invention discloses a semiconductor structure and a forming method thereof. The semiconductor structure includes a substrate, a gate structure, and a conductive element. The gate structure is on the substrate. The gate structure includes a gate electrode and a cap layer. A capping layer is on the gate electrode. The conductive element abuts the outer side surface of the gate structure. The conductive element comprises a lower conductive part and an upper conductive part. The upper conductive portion is electrically connected to the lower conductive portion and abuts the cap layer. An interface is formed between the lower conductive portion and the upper conductive portion. The interface is below an upper surface of the cap layer. |
| priorityDate |
2018-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |