http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110031740-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2607 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2601 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2642 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2019-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110031740-B |
| titleOfInvention | Conducting impact device and impact method under load short-circuit state of semiconductor device |
| abstract | The invention discloses a conducting impact device of a semiconductor device in a load short circuit state, which comprises: the direct current power supply and the load are connected with a source electrode circuit and a drain electrode circuit of the semiconductor device to form a loop, and the load is in a short circuit state before impact; a gate voltage supply circuit that outputs a turn-on gate voltage for turning on the semiconductor device; and the input end circuit of the grid voltage control circuit is connected with the grid voltage providing circuit, the output end of the grid voltage control circuit is connected with the grid electrode and the source electrode of the semiconductor device, the output of the grid voltage control circuit to the grid electrode and the source electrode of the semiconductor device is 0V initially, the output is increased to the conduction grid voltage from 0V after the preset time, the semiconductor device is converted to a conduction state, and the direct-current power supply conducts and impacts on the semiconductor device. The invention provides an impact effect of sudden conduction of a semiconductor device under a load short circuit state, which can adjust impact time and intensity to prevent the device from being damaged due to overhigh power, and impact is carried out in a state close to a critical value on the premise of not damaging the device, so that the device can carry out multiple times of impact under the critical value. |
| priorityDate | 2019-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419581494 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5281951 |
Total number of triples: 14.