| abstract |
Embodiments of the present invention describe non-planar semiconductor devices, such as fin field effect transistors (finfets) having one or more metal rail conductors, and methods of fabricating the same. In some cases, one or more metal rail conductors may be electrically connected to the gate, source and/or drain regions of these non-planar semiconductor devices. In these cases, one or more metal rail conductors may be utilized to electrically connect the gate, source and/or drain regions of the respective non-planar semiconductor devices to other gate, source and/or drain regions of the respective non-planar semiconductor devices and/or other semiconductor devices. In other cases, however, one or more metal rail conductors may be isolated from the gate, source and/or drain regions of these various non-planar semiconductor devices. This isolation prevents electrical connection between one or more metal rail conductors and the gate, source and/or drain regions of these non-planar semiconductor devices. |