| abstract |
The present disclosure provides a storage device based on a tungsten oxide storage element and a manufacturing method thereof. The memory device includes a plug extending upward from a top surface of the substrate through a dielectric layer; a bottom electrode having tungsten on its outer surface, the bottom electrode extending upward from the top surface of the plug; an insulating material, insulating material surrounding the bottom electrode and in contact with the tungsten on the outer surface of the bottom electrode; a storage element located on the upper surface of the bottom electrode, the storage element comprising a tungsten oxide compound, and the storage element can be programmed into at least two resistance states; and a top electrode, the top electrode overlies and contacts the storage element. The plug has a first lateral dimension, and the bottom electrode has a lateral dimension that is parallel to and smaller than the first lateral dimension of the plug. |