http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109904054-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2017-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109904054-B |
| titleOfInvention | Chamber environment recovery method and etching method |
| abstract | The invention provides a chamber environment recovery method, which comprises the following steps: an oxidation step: turning on a power supply, introducing oxygen into the reaction chamber to excite the oxygen to form plasma, reacting the plasma with particles in the reaction chamber, and exhausting the reaction chamber after preset time; a protective film forming step: and introducing etching gas and exciting to form plasma, wherein the plasma etches the etched piece with the protective material to form a protective film on the inner wall of the reaction chamber. The invention also provides an etching method, and the chamber environment recovery method and the etching method can not only solve the particle pollution, but also ensure the productivity and the etching rate of the subsequent etching process. |
| priorityDate | 2017-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.