| abstract |
A semiconductor device includes at least one double barrier resonant tunneling diode (DBRTD). The at least one DBRTD may include a first doped semiconductor layer, and a first barrier layer on the first doped semiconductor layer and including a superlattice. The DBRTD may also comprise a first intrinsic semiconductor layer on the first barrier layer, a second barrier layer on the first intrinsic semiconductor layer and also comprising a superlattice, a second barrier layer on the second barrier layer Two intrinsic semiconductor layers, a third barrier layer on the second intrinsic semiconductor layer and also comprising a superlattice. The third intrinsic semiconductor layer may be on the third barrier layer, the fourth barrier layer may be on the third intrinsic semiconductor layer and also include a superlattice, and the second doped semiconductor layer may be on the fourth barrier layer. |